1. The capacitances in MOSFET occurs due to _____________ A. Interconnects B. Difference in Doping concentration C. Difference in dopant materials D. All of the mentioned 2. The parasitic capacitances found in MOSFET are ___________ A. Oxide related capacitances B. Inter electrode capacitance C. Electrolytic capacitance D. All of the mentioned 4. The …
1. Which of the following mainly constitutes the output node capacitance? A. Inter electrode capacitance B. Stray capacitance C. Junction Parasitic capacitance D. All of the mentioned 2. The junction parasitic capacitance are produced due to ____________ A. Source diffusion regions B. Gate diffusion regions C. Drain diffusion region D. All of the mentioned …
1. The resistance of the uniform slab of the conducting material is? A. Linear(proportional) with length B. Inversely proportional to the thickness C. Inversely proportional to the width D. All of the mentioned 2. The sheet resistance of the conducting material is? A. RS = resistivity/length B. RS = resistivity/width C. RS = resistivity/thickness …
1. Which contributes to the wiring capacitance? A. fringing fields B. interlayer capacitance C. peripheral capacitance D. all of the mentioned 2. What does the value d in fringing field capacitance measure? A. thickness of wire B. length of the wire C. wire to substrate separation D. wire to wire separation 3. Total …
1. Propagation time is directly proportional to ____________ a) x b) 1/x c) x2 d) 1/x2 2. The total resistance can be given as ___________ a) nRs b) nrRs c) rRs d) Rs 3. Total capacitance can be given as ___________ a) n(square Cg) b) nc(square Cg) c) c(square Cg) d) square Cg …
1. For shorter delays ______ resistance should be used. A. smaller B. larger C. does not depend on the resistance D. very large 2. To reduce the resistance value of inverters, channels must be made __________ A. wider B. narrower C. lengthier D. shorter 3. As width increases, capacitive load __________ A. increases …
VLSI Driver MCQ Quiz – Objective Question with Answer for VLSI Driver Read More »
1. The resistance value associated with Rp.u is? A. 2Rs B. Rs C. 4Rs D. Rs/2 2. The resistance value associated with Rp.d. is? A. 2Rs B. Rs C. 4Rs D. Rs/2 3. The overall delay of nMOS inverter pair is? A. 4Ʈ B. Ʈ C. 5Ʈ D. 2Ʈ 4. The inverter …
VLSI Inverter Delay MCQ Quiz – Objective Question with Answer for VLSI Inverter Delay Read More »
1. Conducting layer is separated from substrate using ____________ A. dielectric layer B. silicon layer C. metal layer D. diffusion layer 2. Gate to channel capacitance of 5-micron technology is _____ pF × 10(-4) (micrometer)2. A. 1 B. 2 C. 4 D. 0.4 3. Area capacitance of diffusion region of 2-micron technology is …
1. Area A of a slab can be given as _______ A. t * W B. t / W C. L * W D. L * t 2. For 5-micron technology, What is the Rs value for a metal? A. 0.03 B. 0.04 C. 0.02 D. 0.01 3. For 2-micron technology, what is …
1. Stick diagrams are those which convey layer information through? A. thickness B. color C. shapes D. layers 2. Which color is used for n-diffusion? A. red B. blue C. green D. yellow 3. Which color is used for an implant? A. red B. blue C. green D. yellow 4. Which color …
