Noise in MOS transistor MCQ Quiz – Objective Question with Answer for Noise in MOS transistor

11. If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as:

A. Logic input 1
B. Uncertain
C. Logic input 0
D. None of the mentioned

Answer: A

Logic output 1 from the first gate is considered as logic input 1 at the second gate as it lies within the range.

12. Input Voltage between VIH and VOH is considered as:

A. Logic Input 1
B. Logic Input 0
C. Uncertain
D. None of the mentioned

Answer: A

Input Voltage between VIH and VOH is considered as Logic Input 1.

13. At threshold Voltage, the surface potential is:

A. Fermi potential
B. Fermi potential
C. 2 Fermi potential
D. -2 Fermi potential

Answer: A

When surface potential reaches –fermi potential, the surface inversion occurs. The gate voltage which brings these changes is known as the threshold voltage.

14. Surface inversion occurs when the gate voltage is:

A. Less than zero
B. Less than the threshold voltage
C. Equal to the threshold voltage
D. Greater than the threshold voltage

Answer: C

Surface inversion occurs when the gate voltage is equal to the threshold voltage.

15. For enhancement mode n-MOSFET, the threshold voltage is:

A. Equal to 0
B. Greater than zero or Positive quantity
C. Negative voltage or lesser than zero
D. All of the mentioned

Answer: B

For enhancement mode n-MOSFET, the threshold voltage is a positive quantity.

16. The threshold voltage depends on:

A. The work function difference between gate and channel
B. The gate voltage component to change surface potential
C. The gate voltage component to offset the depletion charge and fixed charges in gate oxide
D. All of the mentioned

Answer: D

The threshold voltage depends on: The work function difference between gate and channel, The gate voltage component to change surface potential, The gate voltage component to offset the depletion charge, and fixed charges in the gate oxide.

17. The expression for threshold voltage for the enhancement mode nMOSFET is:

A. Φgc-2ϕf-Qbo/Cox-Qox/Cox
B. Φgc+ϕf-Qbo/Cox
C. Φgc-ϕf-Qbo/Cox+Qox/Cox
D. Φgc+2ϕf-Qbo/Cox-Qox/Cox

Answer: A

The expression for threshold voltage for the enhancement mode nMOSFET is Φgc-2ϕf-Qbo/Cox-Qox/Cox.

18. Noise Margin is:

A. Amount of noise the logic circuit can withstand
B. Difference between VOH and VIH
C. Difference between VIL and VOL
D. All of the Mentioned

Answer: D

Noise Margin is defined as the amount of noise the logic circuit can withstand, it is given by the difference between VOH and VIH or VIL and VOL.

19. The VIL is found from the transfer characteristics of the inverter by:

A. The point where the straight line at VOH ends
B. The slope of the transition at a point at which the slope is equal to -1
C. The midpoint of the transition line
D. All of the mentioned

Answer: B

The VIL is the input voltage at which the slope of the transition will be equal to -1.

20. The VIH is found from the transfer characteristic of the inverter by:

A. The point where a straight line at VOH ends
B. The slope of the transition at a point at which the slope is equal to -1
C. The midpoint of the transition line
D. All of the mentioned

Answer: B

The VIH is the input voltage at which the slope of the transition will be equal to -1. In Transfer characteristics at 2 points, we will find the slope to be -1.

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